Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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Watson Research Center, New York, where he has worked for over 35 years. Chris Zeh rated it liked it Jun 27, Amazon Second Chance Pass it on, trade it in, give it a movern life. The optimization of these devices for VLSI applications is also covered.
The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. They also discuss fnudamentals detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. Read more Read less. I like this book because it is very organized written and it explains the concepts in a very intuitive and clear way.
Xiuqi added it Oct 26, Joel rated it really liked it Dec 29, Amazon Restaurants Food delivery from local restaurants. Benjamin Gojman added it May devicez, Basic device physics; 3. I am afraid that my book will fall apart after frequent of use. For the starter I will suggest to pick up Tsividis book on “Operation and modeling of MOS Transistor” and concurrently try the present volume. Navaneet marked it as to-read Dec 30, The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description Nadia Awad rated it it was amazing Nov 02, I learn a lot after I finish the first round of read of this book.
This book is not for one-time use. The bipolar-transitor part takes the reader all the way from the classical junction transistor to the modern polysilicon-emitter, SiGe-base variety. So the total is 3 or 3. Hardcoverpages.
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Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices. He spent 20 years at IBM’s T. I stronly recommend you to read and read again. Zhouchangwan Yu rated it did not like it Jun 09, Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Written by renown contributors to the field from IBM, it takes the complexity of integrated semiconductor devices down to its first-order, industry-proven essentials.
Fundamentals of Modern VLSI Devices – Yuan Taur, Tak H. Ning – Google Books
Fundamentals of Modern VLSI Devices
Description This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. Amazon Giveaway devicee you to funcamentals promotional giveaways in order to create buzz, reward your audience, and attract new followers and customers. This is too concise for the beginner to understand but it is good for an engineer involved in this field for several years.
Amazon Advertising Find, attract, and moern customers. From the content and organization of this book I rate it 4. The book is logically organized. ComiXology Thousands of Digital Comics.
Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices. I have no background in device design but I am interested in and have some knowledge of the physics in device. Showing of 16 reviews. The problems at the end of each chapter are carefully designed fundamenals serve to help the readers better understand the key concepts.